Bin Liu

Bin Liu Associate Professor in Law,

Associate Professor of Institute of Evidence Law and Forensic Science ,China University of Political Science and Law (CUPL)

Director of Department of  Research Traffic accident Investigation and trace detection,Key Laboratory of Evidence Science(CUPL),Ministry of Education, China

 

Office Address

Room 408, No.26, Houtun South Road,  Haidian District, 100192, Beijing, China

Tel: (+86 10) 6292 6583

Fax: (+86 10) 62926589

Email: rays_liu@126.com

 

Education Background

2003, Doctoral Program

Chinese Academy of Sciences

Ph.D.

 

Concurrent Position

Associate Professor of Institute of Evidence Law and Forensic Science ,China University of Political Science and Law (CUPL)

Director of Department of  Research Traffic accident Investigation and trace detection,Key Laboratory of Evidence Science(CUPL),Ministry of Education, China

 

Major Publication

Articles

The Investigation of Reliability of 980nm Semiconductor Lasers,Laser Journal, 2002,5: 1-2.

The Investigation of Ar Ion Irradiation to The Surface of GaAs Substrate,2003, 1:22-23.

The Investigation of 980nm Ridge Waveguide Lasers with Current Non- injection Regions by Proton Implantation, Laser & Infrared, 2003, No. 2: 109-111.

The Investigation of 980 nm Ridge Waveguide Lasers with Current Non-Injection Regions by He Ion Implantation Chinese journal of Semiconductors, 2003, 3 : 234-237.

808 nm GaAs/AlGaAs Laser Diode Bar with Current Non-Injection Areas Near the Facets, Laser & Optoelectronics Progress, 2013, 11.

Long-Term Aging and Failure Analysis for 980 nm Laser Diodes,  Laser & Optoelectronics Progress, 2012, 9.

Laser Diode Arrays Pumped CW Nd: YAG Lasers, Acta  Sinica Quantum Optica, 2002 008 (002) :89-92.

Laser Diode Side-pumped CW Nd∶YAG Lasers, Laser & Infrared, 2002 032 (004) :240-242.

Fiber Coupling of Laser Diode Bar to Multimode Fiber Array, Chinese Journal of Semiconductors, 2002 023 (005) :464-467.

High power 808 nm AlGaAs/GaAs quantum well laser diodes with broad waveguide, Chinese Journal of Semiconductors 2002 023 (008) :809-812.

Laser Diode Side-pumped CW Nd∶YAG Lasers, Chinese Journal of Lasers, 2003 030 (007) :577-580.

Fiber Array Packaged Bar of Output Power up to 30W, Journal of Semiconductors 2004, 25(5):579-582.

Transient Temperature Field Study of GaN Material in Laser Lift-off Technique Based on Finite Element Method,Chinese Journal of Lasers, 2005, 32(9):1295-1299.

Temperature field simulation of GaN material during Al2O3/GaN laser lift-off,National doctoral Academic Forum-optical engineering papers set,2005,Beijing:12-16.

Ting Wang,Xia Guo,Bin LiuGuangdi Shen.Temperature field simulation of GaN material during Al2O3/GaN laser lift-off,Opto-Electronic Engineering,2006, 33(3):101-105.

Research and Progress in Reliability of GaN-Based LED, Semiconductor Technology, 2006, (3):161-165.

Effect of Current Crowding on the Reliability of GaN-based LEDs, Laser & Infrared, 2006, (06):491-503.

  Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off. Chinese Optics Letters , 2006(7): 416-418

Structure and optical properties of GaN/metal/Si fabricated by laser lift-off and fusion bonding technique ,Journal of Functional Materials, 2007, 38(1):88-90.

Transferring GaN Film from Sapphire to Cu Substrate by Laser Lift-off, Laser & Infrared ,2007, 37(01):62-65.

Current expansion of high-power diode laser bars,High Power Laser and Particle Beams ,2007, 19(4):529-532.

 

Research Projects

Construction project of Ministry of education and the Central Universities in Beijing:Performance analysis of local legislation.

Construction project of Ministry of education and the Central Universities in Beijing:Research on the key technology of multi-band light source for forensic science

 

Research Award

Patent( As the First Author)

Unidirectional Multi Band Light Source of Forensic Science.(Application Number:200820124242.1)

Bidirectional Multi-Band Light Source of Forensic Science.(Application Number:200820124243.6)

Ultraviolet of Forensic Science.(Application Number:200820124244.0)

Middle and Long Infrared Telegraph Facility.(Application Number:200920106709.4)

A kind of Test Strips.(Application number:200920107181.2)

Dense-Packaging Device of Light Emitting Diode.(Application Number:200920107418.7)

Multi-Band Light Source(Application Number:200920107417.2)

Dense-Packaging Device of LED  Light Source.(Application Number:200920108813.7)

A Kind of High Power Light Emitting Diode.(Application Number:200920246889.6)

Middle and Long Infrared Telegraph Facility.(Application Number:200910081385.8)

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